Staff Scientist
Lei Fang
During her Ph.D. study, Dr. Lei Fang was focusing on study of spin injection, transport, and detection in novel materials and systems. In postdoc, Dr. Fang synthesized and characterized non-rare earth permanent magnet material by a magnetron sputtering system.
At QNS, Dr. Fang works as a research staff member, she works on the design and construction of home-built low-temperature STM systems. She also serves and maintains the engineering/technical requirements from the researchers.
At QNS, Dr. Fang works as a research staff member, she works on the design and construction of home-built low-temperature STM systems. She also serves and maintains the engineering/technical requirements from the researchers.
“Experiments can overthrow the theory, and theory can never overthrow the experiment”
- Samuel C.C. Ting
- 2011
- PhD in physics, The Ohio State University
(Advisor: Ezekiel Johnston-Halperin) - 2004
- BS in physics, University of Science and Technology of China
- 2017 - Current
- Research staff at Center for Quantum Nanoscience(QNS), Institute for Basic Science(IBS), Ewha Womans University, Seoul, Korea
- 2011 - 2014
- Postdoc in Department of Material Sciences and Engineering, University of Maryland, College park, Group of Prof., Ichiro Takeuchi
- 2016
- T. R. Gao, L. Fang, S. Fackler, et al., Large energy product enhancement in perpendicularly coupled MnBi/CoFe magnetic bilayers Phys. Rev. B. 94, 060411(R)
- 2011
- Lei Fang, Xianwei Zhao, Yi-Hsin Chiu, et al., Comprehensive Control of Optical Polarization Anisotropy in Semiconducting Nanowires Appl. Phys. Lett. 99, 141101
- 2011
- Lei Fang, K. D. Bozdag, Chia-Yi Chen, et al., Electrical spin injection from an organic-based ferrimagnet in a hybrid organic/inorganic heterostructure, Phys. Rev. Lett. 106, 156602
- 2010
- June Hyuk Lee, Lei Fang, Eftihia Vlahos, Xianglin Ke et al., A strong ferroelectric ferromagnet created by means of spin-lattice coupling, Nature, 466, 954-959
- 2007
- Shawn Walsh, Lei Fang, J. K. Schaeffer, et al., Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures, Appl. Phys. Lett. 90, 052901