Research Staff
Lei Fang
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During her Ph.D. study, Dr. Lei Fang was focusing on study of spin injection, transport, and detection in novel materials and systems. In postdoc, Dr. Fang synthesized and characterized non-rare earth permanent magnet material by a magnetron sputtering system.
At QNS, Dr. Fang works as a research staff member, she works on the design and construction of home-built low-temperature STM systems. She also serves and maintains the engineering/technical requirements from the researchers.
At QNS, Dr. Fang works as a research staff member, she works on the design and construction of home-built low-temperature STM systems. She also serves and maintains the engineering/technical requirements from the researchers.
“Experiments can overthrow the theory, and theory can never overthrow the experiment”
- Samuel C.C. Ting
- 2011
- PhD physics, The Ohio State University. Advisor: Ezekiel Johnston-Halperin
- 2004
- Bachelor physics, University of Science and Technology of China, July 2004
- 2017 - Current
- Research staff at Center for Quantum Nanoscience (QNS) of Institute of Basic Science (IBS)
- 2011 - 2014
- Postdoc in Department of Material Sciences and Engineering, University of Maryland, College park, Group of Prof., Ichiro Takeuchi
- 2016
- T. R. Gao, L. Fang, S. Fackler, et al., Large energy product enhancement in perpendicularly coupled MnBi/CoFe magnetic bilayers Phys. Rev. B. 94, 060411(R)
- 2011
- Lei Fang, Xianwei Zhao, Yi-Hsin Chiu, et al., Comprehensive Control of Optical Polarization Anisotropy in Semiconducting Nanowires Appl. Phys. Lett. 99, 141101
- 2011
- Lei Fang, K. D. Bozdag, Chia-Yi Chen, et al., Electrical spin injection from an organic-based ferrimagnet in a hybrid organic/inorganic heterostructure, Phys. Rev. Lett. 106, 156602
- 2010
- June Hyuk Lee, Lei Fang, Eftihia Vlahos, Xianglin Ke et al., A strong ferroelectric ferromagnet created by means of spin-lattice coupling, Nature, 466, 954-959
- 2007
- Shawn Walsh, Lei Fang, J. K. Schaeffer, et al., Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures, Appl. Phys. Lett. 90, 052901