09jan2:00 pm3:00 pmSang-Yun LeeCenter for Quantum Information, KIST2:00 pm - 3:00 pm
Sang-Yun Lee Academic Affiliation: Center for Quantum Information, KIST Talk: January 9, 2019 Color centers in wide bandgap semiconductors for quantum applications High
Academic Affiliation: Center for Quantum Information, KIST
Talk: January 9, 2019
Color centers in wide bandgap semiconductors for quantum applications
High purity single crystalline solids can be used as a robust platform for quantum information research since isolated point-defects, which resemble isolated single atoms when phonon coupling is efficiently suppressed, can be created in the middle of the almost noise-free environment. Among point-defects which can be created artificially, color center in wide-bandgap semiconductors such as diamond and silicon carbide have been used to demonstrate various proof-of-idea experiments for quantum information and also quantum applications such as quantum metrology. Even though small size integrated qubit devices consisting of a few entangled spin qubits have been demonstrated, there remain open questions about whether this physical system will allow building large quantum devices in which many qubits can interact with each other without losing their coherent properties.
Managing spin-spin interaction among defects spins near each other is a typical method to enable quantum connection among spin qubits. In addition, the optical transitions strongly correlated with spin states of the color centers allow another pathway for integrating individual qubits. One example is the photonic quantum network which can meditate entanglement among distant spin qubits via spin-selective optical transitions. The spin-to-photon interface based on a color center in diamond has shown the entanglement rate exceeding the decoherence rate of two distant spin qubits. In parallel, there have been efforts for finding novel color centers in various large bandgap materials whose ability as a spin-to-photon interface may exceed that of the diamond color centers. The color centers in silicon carbide are candidates since well-developed device fabrication techniques exist and efficient spin-to-photon interfaces have been found recently. In this presentation, a broad review of the quantum technology based on color centers in solids will be provided, and a summary about recent progress will be presented as well.
(Wednesday) 2:00 pm - 3:00 pm