27may10:15 am11:15 amHosung SeoAjou University10:15 am - 11:15 am KST Jupiter Meeting Room
Hosung Seo Academic Affiliation: Ajou University Date and Time of the Talk: May 27th, 2022; 10:15 - 11:15 First-principles theory of extending the spin
Academic Affiliation: Ajou University
Date and Time of the Talk: May 27th, 2022; 10:15 – 11:15
First-principles theory of extending the spin qubit coherence time in hexagonal boron nitride
Negatively charged boron vacancies (VB–) in hexagonal boron nitride (h-BN) are a rapidly developing qubit platform in two-dimensional materials for solid-state quantum applications. However, their spin coherence time (T2) is very short, limited to a few microseconds owing to the inherently dense nuclear spin bath of the h-BN host. As the coherence time is one of the most fundamental properties of spin qubits, the short T2 time of VB– could significantly limit its potential as a promising spin qubit candidate. In this study, we theoretically proposed two materials engineering methods, which can substantially extend the T2 time of the VB– spin by four times more than its intrinsic T2. We performed quantum many-body computations by combining density functional theory and cluster correlation expansion and showed that replacing all the boron atoms in h-BN with the 10B isotope leads to the coherence enhancement of the VB– spin by a factor of three. In addition, the T2 time of the VB– can be enhanced by a factor of 1.3 by inducing a curvature around VB–. Herein, we elucidate that the curvature-induced inhomogeneous strain creates spatially varying quadrupole nuclear interactions, which effectively suppress the nuclear spin flip-flop dynamics in the bath. Importantly, we find that the combination of isotopic enrichment and strain engineering can maximize the VB– T2, yielding 207.2 and 161.9 μs for single- and multi-layer h-10BN, respectively. Furthermore, our results can be applied to any spin qubit in h-BN, strengthening their potential as material platforms to realize high-precision quantum sensors, quantum spin registers, and atomically thin quantum magnets.
 A. Gottscholl et al., Nat. Mater. 19, 540-545 (2020)
 A. Gottscholl et al., Sci. Adv. 7, eabf3630 (2021).
 M. Ye, H. Seo, and G. Galli, npj Comp. Mater. 5, 44 (2019).
(Friday) 10:15 am - 11:15 am KST