Valeria Sheina

Research Areas
My previous work was related to studies of dopants in semiconductors allowing to encode qubits for quantum technologies. Br dopants in layered MoTe2 materials were of particular interest because of their strong spin-orbit coupling producing spin-valley states. By means of STM I demonstrated that the dopant is hybridized with Q-valleys of the conduction band and that the dopant’s spin has a nanoseconds coherence time, as shown by standard ESR.

At QNS I am working on quantum structures composed of single atom qubits on a 3ML MgO substrate. The principal goal is to build a promising structure allowing control of the spin states and quantum logic gate operations. My work is also dedicated to simulation, an essential tool to develop a reliable model ensuring the description of experimental investigations.