Academic Affiliation: Georg‐August‐University of Göttingen

Talk: November 20, 2018

Charge Dynamics at Semiconductor Surfaces Investigated by Time-Resolved Scanning Tunneling Microscopy

The combination of Scanning Tunneling Microscopy (STM) and optical excitation merges two successful experimental techniques in solid-state physics. The combination of optical pump-probe techniques with Scanning Tunneling Microscopy (STM) enables us to get atomic resolution of an STM with time resolution on the ns time scale, i.e. well beyond the bandwidth of the current amplifier. This approach provides the prospect to resolve surface dynamics on the atomic scale. More specifically, optical excitation and Scanning Tunneling Microscopy (STM) is discussed to study the carrier dynamics at the GaAs(110) surface.