Title: A charge-insensitive single-atom spin-orbit qubit in Si: fully tunable coherence and control

Abstract:

Electrical control of quantum bits could pave the way for scalable quantum computation. An acceptor spin qubit in Si, based on spin-3/2 holes, can be controlled by electrical means using a gate electrode, which offers fast one- and two-qubit rotations and long coherence times at certain sweet spots. The relaxation time T1, while allowing 105 operations, is the primary limiting factor [1]. I will show that, due to the interplay of the Td symmetry of the acceptor in the Si lattice and the spin-3/2 characteristic of hole systems, an applied in-plane magnetic field strongly enhances the performance and coherence properties of the qubit. An appropriate choice of magnetic field orientation leads to a near-total suppression of spin relaxation as well as full tunability of two-qubit operations in a parameter regime in which dephasing due to charge fluctuations can be eliminated. Interestingly for spintronic applications, we find an extreme in-plane anisotropy such that the in-plane g-factor can vanish under certain circumstances [2].