Abstract

An inclusive approach for analysing size dependent field emission properties of silicon nanowires has been presented in the current study. The proposed framework complements the traditionally used method of analysis (using Fowler-Nordheim framework) which takes care of the tunnelling current corresponding to low as well as high electric fields. The present model uses boost factor (which is deduced based on effective work function) and field emission power density as parameters to quantify the field emission in addition to the “field enhancement factor” used previously. Silicon nanowires, obtained using metal induced etching technique, show low turn on voltage, high boost factor and high field emission power for smaller nanostructures due to quantum effects leading to quantization of energy levels thus pushing the effective work function closer to the vacuum level. A new empirical formula, showing a hyperbolic behaviour, has also been proposed to represent and quantify the size dependent field emission power density. Overall, the proposed framework complements the classic Fowler-Nordheim methodology to be used more efficiently for nanomaterials.