Academic Affiliation: Georg‐August‐University of Göttingen

Talk: November 8, 2018

Scanning Tunneling Spectroscopy on semiconductor surfaces

The functionality of nanoscale semiconductor devices crucially depends on details of the electrostatic potential landscape on the atomic scale and its microscopic response to external electric fields. STM can be utilize to map and control these fields on a nanometer scale. To introduce basic concepts like Fermi level pinning by surface states or the important effect of tip-induced band bending, results from different semiconductor surfaces like the Si(111)-2×1 surface and the GaAs(110) surface are presented and discussed. Moreover, locally resolved spectroscopic data are used to map surface states and investigate the contrast induced by different dopant atoms.