Martin Wenderoth

Research area: Applying and developing SPM tools for challenging questions of fundamental research in this field investigating e.g. metalsemiconductor interfaces, transport in graphene, charge dynamics of single dopants in GaAs, Kondo effect and material classes like pnictides, hexaborides and iridates.

Academic Affiliation: Universität Göttingen

Period of Stay: October 1 – December 31, 2018