19nov4:00 pm5:00 pm두옹딘록IBS 통합 나노 구조 물리 연구단
두옹딘록 연구 소속: IBS 통합 나노 구조 물리 연구단 일시: 2020년 11월 19일 시간: KST 16:00 – 17:00 세미나는 영어로 진행됩니다 Diluted Magnetic Semiconductors in Flatland and
연구 소속: IBS 통합 나노 구조 물리 연구단
일시: 2020년 11월 19일
시간: KST 16:00 – 17:00
세미나는 영어로 진행됩니다
Diluted Magnetic Semiconductors in Flatland and Beyond
In the first part of this talk, the evidence of the long-range magnetic order in V-doped WSe2 semiconductors will be presented. The magnetic domains of the long-range ferromagnetic order are observed by magnetic force microscopy at room temperature. More importantly, the magnetic domains can be modulated by a gate bias, which is concrete evidence for the ferromagnetic semiconducting characteristics. The mechanism behind the formation of the long-range order will be also discussed and investigated through scanning tunneling spectroscopy and density functional theory.
In the second part, the giant Zeeman shift from the spin-polarized state in WSe2doped with a small amount of vanadium atoms (~0.15%) by investigating resonant magneto tunneling spectroscopy of a vertical graphite/V-WSe2/graphiteheterojunction will be discussed. The p-type character of the doping state is located near the valence band, substantially shifted under an external magnetic field at 7.8 meV/T with a giant g factor of approximately 135, an order of magnitude higher than that of other 2D magnetic semiconductors. The evidence of the spin-polarized band edges of V-doped WSe2 is also confirmed by circular-polarized photoluminescence.
In the last part, some preliminary observations of possible spin-frustration as well as topological characteristics in V-doped WSe2 will be presented.